SFT018N100BC3
SFT018N100BC3
ПроизводительSCILICON
Партномер производителяSFT018N100BC3
ОписаниеTransistors/Thyristors SCILICON SFT018N100BC3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SCILICON |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃ |
| configuration | - |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Pd- Power Dissipation | 250W |
| RDS(on) | 1.8mΩ@10V |
| Drain to Source Voltage | 100V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 320A |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Input Capacitance(Ciss) | 10.12nF |
| Output Capacitance(Coss) | 1.36nF |
| Gate Charge(Qg) | 175nC@10V |