SFW097N200C3
SFW097N200C3
ПроизводительSCILICON
Партномер производителяSFW097N200C3
ОписаниеTransistors/Thyristors SCILICON SFW097N200C3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SCILICON |
| Вес | 8.343 |
| Operating Temperature | -55℃~+175℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Pd- Power Dissipation | 375W |
| RDS(on) | 8.4mΩ@10V |
| Drain to Source Voltage | 200V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 135A |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Input Capacitance(Ciss) | 10.338nF |
| Output Capacitance(Coss) | 425pF |
| Gate Charge(Qg) | 195nC@10V |