SFW107N200C3
SFW107N200C3
ПроизводительSCILICON
Партномер производителяSFW107N200C3
ОписаниеTransistors/Thyristors SCILICON SFW107N200C3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SCILICON |
| Вес | 10.058 |
| Operating Temperature | -55℃~+175℃ |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Pd- Power Dissipation | 375W |
| RDS(on) | 8.7mΩ@10V |
| Drain to Source Voltage | 200V |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 132A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Input Capacitance(Ciss) | 4.972nF |
| Output Capacitance(Coss) | 425pF |
| Gate Charge(Qg) | 58nC@10V |