SFB030N100C3
SFB030N100C3
ПроизводительSCILICON
Партномер производителяSFB030N100C3
ОписаниеTransistors/Thyristors SCILICON SFB030N100C3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SCILICON |
| Вес | 2.341 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Pd- Power Dissipation | 223W |
| RDS(on) | 2.5mΩ@10V |
| Drain to Source Voltage | 100V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 260A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Input Capacitance(Ciss) | 10.568nF |
| Output Capacitance(Coss) | 1.245nF |
| Gate Charge(Qg) | 171nC@10V |