SFW096N200I3
SFW096N200I3
ПроизводительSCILICON
Партномер производителяSFW096N200I3
ОписаниеTransistors/Thyristors SCILICON SFW096N200I3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SCILICON |
| Вес | 7.1 |
| Operating Temperature | -55℃~+150℃ |
| configuration | - |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Pd- Power Dissipation | 250W |
| RDS(on) | 9.6mΩ@10V |
| Drain to Source Voltage | 200V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Input Capacitance(Ciss) | 5.45nF |
| Output Capacitance(Coss) | 407pF |
| Gate Charge(Qg) | 69nC@10V |