20G10F
20G10F
ПроизводительHL
Партномер производителя20G10F
ОписаниеTransistors/Thyristors HL 20G10F
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | HL |
| Вес | 0.173 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| Pd- Power Dissipation | 3.5W |
| RDS(on) | 220mΩ@10V |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 15A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Input Capacitance(Ciss) | 1.228nF |
| Output Capacitance(Coss) | 53pF |
| Gate Charge(Qg) | 20.6nC@10V |