SG2M012075HJ
SG2M012075HJ
ПроизводительSichainsemi
Партномер производителяSG2M012075HJ
ОписаниеSilicon Carbide (SiC) Devices Sichainsemi SG2M012075HJ
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Sichainsemi |
| Вес | 8.534 |
| Operating Temperature | -55℃~+175℃ |
| Type | One N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Pd- Power Dissipation | 517W |
| Drain to Source Voltage | 750V |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 160A |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Input Capacitance(Ciss) | 6.886nF |
| Gate Charge(Qg) | 214nC |
| Reverse Transfer Capacitance (Crss) | 15pF |
| Ciss-Input Capacitance | 6.886nF |