SFB035N100C3
SFB035N100C3
ПроизводительSCILICON
Партномер производителяSFB035N100C3
ОписаниеTransistors/Thyristors SCILICON SFB035N100C3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SCILICON |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| configuration | - |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Pd- Power Dissipation | 183W |
| RDS(on) | 3.5mΩ@10V |
| Drain to Source Voltage | 100V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 160A |
| Gate Threshold Voltage (Vgs(th)) | 3.6V@250uA |
| Input Capacitance(Ciss) | 7.04nF |
| Output Capacitance(Coss) | 1.01nF |
| Gate Charge(Qg) | 122nC@10V |