GSD07N65E
GSD07N65E
ПроизводительXCH
Партномер производителяGSD07N65E
ОписаниеTransistors/Thyristors XCH GSD07N65E
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | XCH |
| Вес | 0.458 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 6.4pF@25V |
| Pd- Power Dissipation | 35W |
| RDS(on) | 700mΩ@10V,3.5A |
| Drain to Source Voltage | 650V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 7A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Input Capacitance(Ciss) | 400pF@25V |
| Output Capacitance(Coss) | 113pF |
| Gate Charge(Qg) | 10.3nC@10V |