BCW120N60M2
BCW120N60M2
ПроизводительBestirpower
Партномер производителяBCW120N60M2
ОписаниеSilicon Carbide (SiC) Devices Bestirpower BCW120N60M2
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Bestirpower |
| Вес | 1 |
| Operating Temperature | -55℃~+175℃ |
| Type | One N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Pd- Power Dissipation | 306W |
| RDS(on) | 60mΩ |
| Drain to Source Voltage | 1.2kV |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 57A |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Input Capacitance(Ciss) | 2.236nF |
| Output Capacitance(Coss) | 89pF |
| Gate Charge(Qg) | 97.3nC |
| Reverse Transfer Capacitance (Crss) | 2pF |
| Ciss-Input Capacitance | 2.236nF |