SP010N02LGHTO
SP010N02LGHTO
ПроизводительSiliup
Партномер производителяSP010N02LGHTO
ОписаниеTransistors/Thyristors Siliup SP010N02LGHTO
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Siliup |
| Вес | 1.136 |
| Operating Temperature | -55℃~+150℃ |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| Pd- Power Dissipation | 255W |
| RDS(on) | 2.3mΩ@10V |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 245A |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Input Capacitance(Ciss) | 8.516nF |
| Output Capacitance(Coss) | 1.356nF |
| Gate Charge(Qg) | 130nC |