SVT036R0NL3TR
SVT036R0NL3TR
ПроизводительHangzhou Silan Microelectronics
Партномер производителяSVT036R0NL3TR
ОписаниеTransistors/Thyristors Hangzhou Silan Microelectronics SVT036R0NL3TR
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Hangzhou Silan Microelectronics |
| Вес | 0.1 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 128pF |
| Pd- Power Dissipation | 32W |
| RDS(on) | 6mΩ@10V |
| Drain to Source Voltage | 30V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 58A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Input Capacitance(Ciss) | 1.192nF |
| Output Capacitance(Coss) | 171pF |
| Gate Charge(Qg) | 23nC@10V |