BMI10N881
BMI10N881
ПроизводительBORN
Партномер производителяBMI10N881
ОписаниеTransistors/Thyristors BORN BMI10N881
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | BORN |
| Вес | 0.464 |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Pd- Power Dissipation | 34.5W |
| RDS(on) | 88mΩ@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 15A |
| Gate Threshold Voltage (Vgs(th)) | 1.5V@250uA |
| Input Capacitance(Ciss) | 890pF |
| Output Capacitance(Coss) | 60pF |
| Gate Charge(Qg) | 24nC@10V |