XR80N06
XR80N06
ПроизводительXNRUSEMI
Партномер производителяXR80N06
ОписаниеTransistors/Thyristors XNRUSEMI XR80N06
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | XNRUSEMI |
| Вес | 1 |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF@30V |
| Pd- Power Dissipation | 108W |
| RDS(on) | 5.3mΩ@10V,30A |
| Drain to Source Voltage | 60V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 80A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Input Capacitance(Ciss) | 4.136nF@30V |
| Gate Charge(Qg) | 90nC@30V |