SG2M023120LJ
SG2M023120LJ
ПроизводительSichainsemi
Партномер производителяSG2M023120LJ
ОписаниеSilicon Carbide (SiC) Devices Sichainsemi SG2M023120LJ
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Sichainsemi |
| Вес | 7.691 |
| Operating Temperature | -55℃~+175℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 7.4pF |
| Pd- Power Dissipation | 395W |
| RDS(on) | 31mΩ |
| Drain to Source Voltage | 1.2kV |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 97A |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Input Capacitance(Ciss) | 2.78nF |
| Output Capacitance(Coss) | 147pF |
| Gate Charge(Qg) | 95nC |
| Reverse Transfer Capacitance (Crss) | 7.4pF |
| Ciss-Input Capacitance | 2.78nF |