SFB039N100C3
SFB039N100C3
ПроизводительSCILICON
Партномер производителяSFB039N100C3
ОписаниеTransistors/Thyristors SCILICON SFB039N100C3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SCILICON |
| Вес | 2.317 |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Pd- Power Dissipation | 208W |
| RDS(on) | 3.4mΩ@10V |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Input Capacitance(Ciss) | 6.51nF |
| Output Capacitance(Coss) | 856pF |
| Gate Charge(Qg) | 107nC@10V |