DOS11N10
DOS11N10
ПроизводительDOINGTER
Партномер производителяDOS11N10
ОписаниеTransistors/Thyristors DOINGTER DOS11N10
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | DOINGTER |
| Вес | 0.1 |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9.6pF@50V |
| Pd- Power Dissipation | 3.5W |
| RDS(on) | 14mΩ@10V |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 11A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Input Capacitance(Ciss) | 2.1458nF@50V |
| Output Capacitance(Coss) | 305.7pF |
| Gate Charge(Qg) | 50nC@10V |