XR30P02D
XR30P02D
ПроизводительXNRUSEMI
Партномер производителяXR30P02D
ОписаниеTransistors/Thyristors XNRUSEMI XR30P02D
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | XNRUSEMI |
| Вес | 0.112 |
| Operating Temperature | -55℃~+150℃ |
| Reverse Transfer Capacitance (Crss@Vds) | 590pF@15V |
| Pd- Power Dissipation | 18W |
| RDS(on) | 10mΩ@4.5V,10A |
| Drain to Source Voltage | 20V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 30A |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Input Capacitance(Ciss) | 2.8nF@15V |
| Gate Charge(Qg) | 35nC@10V |