XR75N10H
XR75N10H
ПроизводительXNRUSEMI
Партномер производителяXR75N10H
ОписаниеTransistors/Thyristors XNRUSEMI XR75N10H
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | XNRUSEMI |
| Вес | 1 |
| Reverse Transfer Capacitance (Crss@Vds) | 252pF@25V |
| Pd- Power Dissipation | 125W |
| RDS(on) | 9.9mΩ@10V,30A |
| Drain to Source Voltage | 100V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 75A |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Input Capacitance(Ciss) | 7.355nF@25V |
| Gate Charge(Qg) | 128nC@50V |