XR60N10H
XR60N10H
ПроизводительXNRUSEMI
Партномер производителяXR60N10H
ОписаниеTransistors/Thyristors XNRUSEMI XR60N10H
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | XNRUSEMI |
| Вес | 1 |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF |
| Pd- Power Dissipation | 154W |
| RDS(on) | 20mΩ@10V |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Input Capacitance(Ciss) | 6.249nF |
| Output Capacitance(Coss) | 279pF |
| Gate Charge(Qg) | 87nC@10V |