GD5F4GM8UEYIGR
GD5F4GM8UEYIGR
ПроизводительGigaDevice Semicon Beijing
Партномер производителяGD5F4GM8UEYIGR
ОписаниеMemory GigaDevice Semicon Beijing GD5F4GM8UEYIGR
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | GigaDevice Semicon Beijing |
| Вес | 1 |
| Operating Temperature | -40℃~+85℃ |
| Interface | SPI |
| Clock Frequency | 133MHz |
| Memory Size | 4Gbit |
| Data Retention - TDR (Year) | 10 Years |
| Voltage - Supply | 2.7V~3.6V |
| Program / Erase Cycles | 80,000 cycles |
| Block Erase Time(tBE) | 3ms |
| Page Program time (TPP) | 320us |
| Standby Supply Current | 100uA |