GD9AU8G8E3AMGI
GD9AU8G8E3AMGI
ПроизводительGigaDevice Semicon Beijing
Партномер производителяGD9AU8G8E3AMGI
ОписаниеMemory GigaDevice Semicon Beijing GD9AU8G8E3AMGI
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | GigaDevice Semicon Beijing |
| Вес | 2.463 |
| Operating Temperature | -40℃~+85℃ |
| Memory Size | 1Gbit |
| Data Retention - TDR (Year) | 10 Years |
| Voltage - Supply | 2.7V~3.6V |
| Program / Erase Cycles | 100,000 Cycles |
| Block Erase Time(tBE) | 3ms |
| Page Program time (TPP) | 400us |
| Standby Supply Current | 50uA |