ISL28213FBZ-HXY
ISL28213FBZ-HXY
ПроизводительHXY MOSFET
Партномер производителяISL28213FBZ-HXY
ОписаниеAmplifiers/Comparators HXY MOSFET ISL28213FBZ-HXY
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | HXY MOSFET |
| Вес | 0.116 |
| Operating Temperature | -55℃~+125℃ |
| Number of Channels | 2 |
| Output Current | 45mA |
| Input Offset Current(Ios) | 1pA |
| Rail to Rail | Rail-to-Rail Input, Rail-to-Rail Output |
| Maximum Power Supply Range (Vdd-Vss) | 5.5V |
| Noise density(eN) | 65nV/√Hz@1kHz |
| Voltage - Supply | -2.75V~-750mV;1.5V~5.5V;750mV~2.75V |
| Common Mode Rejection Ratio(CMRR) | 80dB |
| Slew Rate | 1V/us |
| Vos - Input Offset Voltage | 3mV |
| Input Offset Voltage Drift(Vos TC) | 1.8uV/℃ |
| Quiescent Current(Iq) | 28uA |
| Gain Bandwidth Product | 1MHz |
| Ib - Input Bias Current | 5pA |